 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Infineon IGBT BUP 212 * Low forward voltage drop * High switching speed * Low tail current * Latch-up free * Avalanche rated Pin 1 G Type BUP 212 Maximum Ratings Parameter Collector-emitter voltage Emitter-collector voltage Collector-gate voltage Symbol Values 1200 Unit V Pin 2 C Ordering Code Q67040-A . . . . Q67040-A4408 . Pin 3 E VCE IC Package TO-220 AB 1200V 22A VCE VEC VCGR RGE = 20 k Gate-emitter voltage DC collector current 1200 VGE IC 20 A 22 8 TC = 25 C TC = 110 C Pulsed collector current, tp = 1 ms ICpuls 44 16 TC = 25 C TC = 110 C Avalanche energy, single pulse EAS 10 mJ IC = 8 A, VCC = 50 V, RGE = 25 L = 300 H, Tj = 25 C Power dissipation Ptot 125 W -55 ... + 150 -55 ... + 150 C TC = 25 C Chip or operating temperature Storage temperature Tj Tstg Semiconductor Group 1 May-05-1997 Infineon Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, chip case Symbol Values E 55 / 150 / 56 BUP 212 Unit - RthJC 1 K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.5 3.1 3.4 4.3 6.5 3 3.7 - V VGE = VCE, IC = 0.3 mA, Tj = 25 C Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 8 A, Tj = 25 C VGE = 15 V, IC = 8 A, Tj = 125 C VGE = 15 V, IC = 16 A, Tj = 25 C VGE = 15 V, IC = 16 A, Tj = 125 C Zero gate voltage collector current ICES 0.4 mA nA 120 VCE = 1200 V, VGE = 0 V, Tj = 25 C Gate-emitter leakage current IGES VGE = 25 V, VCE = 0 V AC Characteristics Transconductance gfs 4 5 600 60 38 - S pF 800 90 55 VCE = 20 V, IC = 8 A Input capacitance Ciss Coss - VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Crss - VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group 2 May-05-1997 Infineon Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time Values typ. max. BUP 212 Unit td(on) 55 110 ns VCC = 600 V, VGE = 15 V, IC = 8 A RGon = 150 Rise time tr 50 100 VCC = 600 V, VGE = 15 V, IC = 8 A RGon = 150 Turn-off delay time td(off) 380 570 VCC = 600 V, VGE = -15 V, IC = 8 A RGoff = 150 Fall time tf 80 120 VCC = 600 V, VGE = -15 V, IC = 8 A RGoff = 150 Semiconductor Group 3 May-05-1997 Infineon Power dissipation Ptot = (TC) parameter: Tj 150 C 130 W 110 BUP 212 Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C 26 A 22 Ptot 100 90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 C 160 IC 20 18 16 14 12 10 8 6 4 2 0 0 20 40 60 80 100 120 C 160 TC TC Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C 10 2 tp = 13.0s Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 IGBT K/W A IC 10 1 100 s ZthJC 10 0 10 -1 D = 0.50 0.20 10 0 1 ms 0.10 10 -2 single pulse 10 ms 0.05 0.02 0.01 10 -1 10 0 10 1 10 2 DC 3 10 V 10 -3 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 VCE tp Semiconductor Group 4 May-05-1997 Infineon Typ. output characteristics Typ. output characteristics BUP 212 IC = f (VCE) parameter: tp = 80 s, Tj = 25 C 20 A IC = f (VCE) parameter: tp = 80 s, Tj = 125 C 20 A IC 16 14 12 10 8 6 4 2 0 0 17V 15V 13V 11V 9V 7V IC 16 14 12 10 8 6 4 2 0 0 17V 15V 13V 11V 9V 7V 1 2 3 V 5 1 2 3 V 5 VCE VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 s, VCE = 20 V 25 A 22 IC 20 18 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 V 14 VGE Semiconductor Group 5 May-05-1997 Infineon Typ. switching time Typ. switching time BUP 212 t = f (IC) , inductive load , Tj = 125C par.:VCE=600V, VGE = 15V, RG =153 10 3 t = f (RG) , inductive load , Tj = 125C par.:VCE=600V, VGE = 15V, IC =8 A 10 3 tdoff t ns tdoff t ns 10 2 tr tf tdon 10 2 tf tdon tr 10 1 0 4 8 12 16 20 24 A IC 30 10 1 0 50 100 150 200 250 300 350 400 RG 500 Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125C par.:VCE=600V, VGE = 15V, RG =153 10 mWs E 8 7 6 5 4 3 2 Eoff 1 0 0 Eon E = f (RG) , inductive load , Tj = 125C par.:VCE=600V, VGE = 15V, IC =8 A 10 mWs E 8 7 6 5 4 3 Eon 2 1 Eon 4 8 12 16 20 24 A 30 IC 0 0 50 100 150 200 250 300 350 400 RG 500 Semiconductor Group 6 May-05-1997 Infineon Typ. gate charge VGE = (QGate) parameter: IC puls = 15 A 20 V pF BUP 212 Typ. capacitances C = f (VCE) 10 4 VGE 16 14 12 10 8 C 600 V 800 V 10 3 Ciss 10 2 6 Coss 4 2 0 0 10 1 0 Crss 10 20 30 40 50 60 70 80 nC 100 5 10 15 20 25 30 QGate V 40 VCE Short circuit safe operating area Reverse biased safe operating area ICsc = f (VCE) , Tj = 150C parameter: VGE = 15 V, tsc 10 s, L < 25 nH 10 ICpuls = f (VCE) , Tj = 150C parameter: VGE = 15 V 2.5 ICsc/IC(90C) ICpuls/IC 6 1.5 4 1.0 2 0.5 0 0 200 400 600 800 1000 1200 V 1600 VCE 0.0 0 200 400 600 800 1000 1200 V 1600 VCE Semiconductor Group 7 May-05-1997 |
Price & Availability of BUP212
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |